ELECTRONIC DEVICES

6 )

For p – n junction, which statement is incorrect?

Donor atoms are depleted of their holes in junction

No net charge exists far from junction

Barrier potential VB is generated

Energy VB is to be surmounted before any charge can flow across junction

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Answer :

Energy V_B is to be surmounted before any charge can flow across junction is wrong statement.

7 )

The intrinsic semi-conductor has:

a finite resistance which does not change with temperature

infinite resistance which decreases with temperature

Finite resistance which decreases with temperature

Finite resistance which does not change with temperature

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Answer :

Intrinsic semiconductor has finite resistance which decreases with temperature increase.

8 )

The behavior of Ge as semi-conductor is due to width of:

Conduction band being large

Forbidden band being large

Conduction band being small

Forbidden band being small and narrow

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Answer :

Ge acts as semiconductor as width of forbidden band is small and it is narrow.

9 )

Which of the following is not the advantage of PN junction diode over tube valve?

Unlimited life

No warming-up time after switching

Large efficiency

Low consumption of Power

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Answer :

P-N junction diode get damaged after some use easily. Hence it has limited life.

10 )

The forward biased diode is

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Answer :

Forward biasing means positive end at higher potential than the negative end.